دانلود رایگان ترجمه مقاله دستگاه های قدرت جانبی جدید SOI با اکسید ترانشه – الزویر ۲۰۰۴
دانلود رایگان مقاله انگلیسی ابزارهای قدرت جانبی جدید پوشش سیلیکون بر عایق با اکسید مدفون به همراه ترجمه فارسی
عنوان فارسی مقاله | ابزارهای قدرت جانبی جدید پوشش سیلیکون بر عایق با اکسید مدفون |
عنوان انگلیسی مقاله | New SOI lateral power devices with trench oxide |
رشته های مرتبط | مهندسی برق، مهندسی الکترونیک، الکترونیک قدرت و ماشینهای الکتریکی |
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نشریه | الزویر – Elsevier |
مجله | الکترونیک حالت جامد – Solid-State Electronics |
سال انتشار | ۲۰۰۴ |
کد محصول | F807 |
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جستجوی ترجمه مقالات | جستجوی ترجمه مقالات مهندسی برق |
فهرست مقاله: چکیده |
بخشی از ترجمه فارسی مقاله: ۱- مقدمه |
بخشی از مقاله انگلیسی: ۱٫ Introduction Lateral power devices on SOI (silicon on insulator) have attracted much attention in a wide variety of applications such as automotive electronics, consumer electronics, telecommunications, and industrial electronics [1]. Advantages of SOI technology are superior isolation, reduced parasitic capacitances and leakage currents, and superior high temperature performance compared to traditional junction isolation. These advantages allow efficient monolithic integration of multiple power devices and low-voltage control circuitry on a single chip. The main issues in the development of these devices are to obtain the best trade-off between the specific on-resistance (RSP) and the breakdown voltage (BV) [2], and to shrink the feature size without degrading device characteristics. In order to fulfill these requirements new structures such as super-junctions [3], buried gate oxide devices [4], LUDMOSFETs [5], trench lateral power MOSFETs with a trench bottom source contact (TLPM/ S) [6], the multi-channel approach [7], and hybrid SOI LDMOS-IGBT [8] have been proposed. Vertical SJ devices such as COOLMOS [9] and MDmesh [10] assume complete charge balance of the depletion layer. This can be achieved by introducing alternating n- and p-columns in the drift region, which allow to drastically increase the doping in this region. This results in a significant reduction in RSP of the devices. Recently a lateral SJ SOILDMOSFET [11] which has a channel on the side wall of the device was proposed to improve on-state characteristics. The channel can be made by a lateral trench gate, which increases the channel area. To obtain the best trade-off between RSP and BV, we suggest a SJ SOI-LDMOSFET which has an extra pcolumn and a trench oxide in the drift region. The extra p-column is doped to achieve a balanced charge condition which means that the net depletion layer charge is zero. The trench oxide in the p-column helps to reduce the drift length without further decreasing the conduction area (only the n-column contributes to the current conduction). The RSP of the proposed structure is effectively reduced by the SJ concept together with the trench oxide. In order to reduce the chip size of the high-voltage ICs it is important to increase the current density of the output power devices. Lateral IGBTs on SOI have attracted much attention for high-voltage ICs and smart power applications, because they simultaneously handle high voltage and large current [12]. By means of dielectric isolation high-voltage LIGBTs on SOI allow to increase the operating current density due to minority carrier injection. However, this causes a slow turn-off time and a potential parasitic thyristor latch-up of the devices. One of the efficient methods to achieve fast switching is to introduce a shorted-anode structure to the LIGBT. The SA-LIGBT (shorted-anode LIGBT) offers design flexibility with respect to the trade-off between switching speed and on-resistance. The nþ anode short provides an electron extraction path during turn-off. The major drawback of the SA-LIGBT is its negative differential resistance (NDR) region caused by the two different conduction mechanisms responsible for the current flow in the SA-LIGBT [13]. To suppress the NDR one needs to increase the pþ anode length [14], but this results in a larger chip size. We propose a new SA-LIGBT which has a trench oxide at the drain/anode region. With this structure it is possible to reduce the snap-back voltage, and a similar turn-off time as that of the LDMOSFET can be obtained. Even the reverse characteristics of the proposed structure are similar to that of the conventional device. Two-dimensional numerical simulations with Minimos-NT [15] have been performed to investigate the influence of device parameters on the on-state characteristics, BV, and switching performance. ۲٫ Device structures Fig. 1 shows the schematic structure of the proposed SJ SOI-LDMOSFET which has a trench oxide in the drift region. With the structure proposed it is possible to reduce the drift length drastically without degrading the maximum BV by increasing the surface path of the drift layer. This buried p-column can be connected to the p-body directly or indirectly. The optimum p-column doping concentration is determined by the width of the p-column and the net charge of the n-column. Our device is designed to achieve a BV of 300 V with an SOI thickness tsoi of 7.0 lm and with a buried oxide thickness tox of 2.0 lm. With these parameters the maximum BV of conventional SOI-LDMOSFETs is 300 V at the minimum allowable drift length of 20.0 lm. The trench oxide depth affects the BV, and it must be designed to ensure a long enough surface path of the device. It is important to minimize the p-column width, because it shrinks the conduction area of the device. The optimal n- and p-column doping concentrations depend on the column width. The n-column doping must be increased to lower the on-resistance of the SJ devices. Simulations are performed to find optimum device parameters with a trench oxide depth from 2.0 to 3.0 lm and a p-column width from 0.3 to 1.3 lm. With an ncolumn width WN of 4.0 lm, a p-column width WP of 0.3 lm and a drift length Ld of 13.0 lm the doping concentration of the n-column can be raised up to 6.0 · ۱۰۱۵ cm۳٫ As shown in Fig. 2, the current of the proposed structure flows through the n-column and therefore shows clearly that only the n-column contributes to the current conduction. |