دانلود رایگان ترجمه مقاله دینامیک حامل در سلولهای خورشیدی کوانتومی چند پیوندی – IEEE 2014
دانلود رایگان مقاله انگلیسی دینامیک های حامل در پیل های خورشیدی چند پیوندی کوانتوم نقطه ای تحت تمرکز به همراه ترجمه فارسی
عنوان فارسی مقاله: | دینامیک های حامل در پیل های خورشیدی چند پیوندی کوانتوم نقطه ای تحت تمرکز |
عنوان انگلیسی مقاله: | Carrier Dynamics in Quantum-Dot Multijunction Solar Cells Under Concentration |
رشته های مرتبط: | مهندسی برق، مهندسی انرژی، فوتونیک، انرژی های تجدیدپذیر، فناوری های انرژی، مهندسی الکترونیک، فوتونیک گرایش الکترونیک |
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نشریه | IEEE |
کد محصول | f204 |
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بخشی از ترجمه فارسی مقاله: چکیده معیار سنجش سلول خورشیدی چند پیوندی تطبیق شدۀ شبکه ای (QD) کوانتوم نقطه ای (MJSCs)، متشکل از InGap/ (In) Ge /GaAS یا InAS /GaASQDS می شوند که تحت روشنایی تمرکز بالا، با یک تمرکز بر دینامیک های حامل در لایه های QD زیر پیل میانه مورد بررسی قرار می گیرند. یک رویکرد رسانه ای مؤثر، برای توصیف تولید و ترکیب مجدد در سیستم QD مورد استفاده قرار می گیرد، که مشتمل بر فرار و تیراندازی حامل به واسطه حالت های QD و دیوارۀ کوانتومی محدود می باشد. در یک تمرکز 1000 خورشید، شبیه سازی ها نشان می دهد که QD MJSC ویژۀ بررسی شده، نسبت به MJSC استاندارد تا %1/1در بازدهی نسبی عملیاتی در دمای ℃25 بهتر می باشد. اگرچه، این بازدهی بدست آمده عمدتاً به پتانسیل های لایه مرطوب سازی و به همان صورت عدم انطباق جریان موجود بین زیر پیل های میانه و بالا وابسته می باشد، هنگامی که نسبتهای فرار در بین حدود لایه مرطوب سازی کاهش پیدا می کند. |
بخشی از مقاله انگلیسی: Abstract The key performance metrics of quantum-dot (QD)- lattice-matched multijunction solar cells (MJSCs) composed of InGaP/(In)GaAs/Ge with InAs/GaAs QDs are explored under highconcentration illumination with a focus on the carrier dynamics in the QD layers of the middle subcell. An effective medium approach is used to describe generation and recombination in the QD system, including carrier escape and capture from the weakly con- fining quantum well and the QD states. At a concentration of 1000 suns, simulations indicate that the specific QD MJSC studied outperforms a standard MJSC by 1.1% in relative efficiency operating at 25 °C. However, this gain in efficiency is highly dependent on the confinement potentials of the wetting layer, as well as the resulting current mismatch between the top and middle subcells when carrier escape rates from within the wetting layer confinements are reduced. THE current research avenue in developing next-generation photovoltaic devices with efficiencies reaching 50% is aligned toward concentrated photovoltaics to focus sunlight onto smaller device areas. This allows for a reduction in the growth and manufacturing costs associated with III–V multijunction solar cells (MJSCs), and also increases device efficiency due to the effects of concentration. The current state-of-the-art triplejunction solar cells, such as the lattice matched device composed of In0.49Ga0.51P/In0.01Ga0.99As/Ge, are currently capable of achieving greater than 40% efficiency at concentrations of 400 suns [1]. However, this MJSC design does not exploit the ideal combination of bandgaps, since the Ge subcell overproduces photocurrent by as much as 60% compared with the top two subcells. The excess photocurrent is dissipated as heat, which results in some performance degradation. An alternative design to this device architecture is obtained by exploiting the self-assembled growth of low-dimensional semiconductor heterostructures such as InAs quantum dots (QDs) on an InAs wetting layer (WL) within the InGaAs subcell. The zero-dimensional confinement effects in these nanostructures have been shown to produce controlled and reproducible energy transitions [2] with strong wave function overlap [3]. As a result, these nanostructures can be size engineered to harness photon energies below the bandgap of the bulk material, which leads to a redistribution of current from the bottom Ge subcell to the middle subcell [4], [5]. Combined with an optimized top subcell bandgap using sublattice ordering effects in InGaP [6], the short-circuit current density (Jsc ) of the full device can be increased under 1-sun illumination [4], [7]. This strategy can potentially be exploited to increase the overall device efficiency depending on the drop in the open-circuit voltage (Voc ) and fill factor (FF) arising from introducing lower bandgap structures in the middle subcell. Achieving near 1-V open-circuit voltage for a single-junction GaAs solar cell containing InAs/GaAs QD has been recently shown in the literature [8] and is a very promising feat for MJSC applications. In order to achieve an overall boost in the performance, however, the carrier dynamics near these low-dimensional semiconductor heterostructures must be understood in greater detail since these affect recombination rates that inherently dictate the Voc and FF, and therefore, the overall efficiency (η). Additionally, these effects must also be studied over concentration where the competition between radiative and nonradiative recombination rates impacts the cell’s overall performance. In this paper, we present a study on the effects of carrier dynamics in the InAs/InGaAs QD system on the overall performance of an InGaP/InGaAs/Ge MJSC. This study builds on our previous work in developing a numerical model of a QD MJSC, which focused on the generation and recombination in the QD layers [4]. We first give a brief outline of the model before discussing how the carrier dynamics are treated in the numerical modeling environment. This model is created using version vG-2012.06 of TCAD Sentaurus by Synopsys, where the transport equations are handled by Sentaurus Device’s finite difference and finite-element methods. The performance of the QD MJSC is then simulated under standard testing conditions (1 kW/m2, AM1.5D spectrum at 300 K) before the performance over concentrated illumination is explored. |